Title :
Low frequency noise characteristics of self-aligned AlGaAs/GaAs power heterojunction bipolar transistors
Author :
Tutt, Marcel N. ; Pavlidis, Dimitris ; Khatibzadeh, Ali ; Bayraktaroglu, Burhan
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
2/1/1995 12:00:00 AM
Abstract :
The low frequency noise characteristics of modern self-aligned AlGaAs/GaAs power HBT´s have been studied as a function of bias, temperature, frequency, and circuit topology. The devices have a 1/fγ behavior between 10 Hz and 100 Hz with 0.78⩽γ⩽1.65. Strong deviation from 1/fγ is measured at higher frequencies due to trapping. The bias dependence of the collector noise ranged from IC1.5-IC 2.6, while that for the base noise ranges from IB 0.7-IB2.5. In all cases the collector noise is greater than the base noise. The base noise is apparently dominated by surface recombination noise and generation-recombination (G-R) noise. The collector noise is due to recombination mechanisms and G-R noise. The activation energy (Ea ) of the most significant trap is approximately 0.58 eV. The noise of the devices tested was found to be dominated by material and fabrication related mechanisms and not by fundamental mechanisms
Keywords :
1/f noise; III-V semiconductors; aluminium compounds; electron traps; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; hole traps; power bipolar transistors; semiconductor device models; semiconductor device noise; surface recombination; 1/fγ behavior; 10 to 100 Hz; AlGaAs-GaAs; G-R noise; LF noise characteristics; activation energy; base noise; bias dependence; circuit topology; collector noise; frequency dependence; generation-recombination noise; heterojunction bipolar transistors; low frequency noise; self-aligned power HBT; surface recombination noise; temperature dependence; trapping; Circuit noise; Circuit topology; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Low-frequency noise; Noise generators; Noise level; Noise shaping; Phase noise;
Journal_Title :
Electron Devices, IEEE Transactions on
