Direct measurement of the carrier leakage out of the active region in InGaAsP/InP laser heterostructures

Author

Belenky, Gregory L. ; Kazarinov, R.F. ; Lopata, John ; Luryi, Serge ; Tanbun-Elk, T. ; Garbinski, P.A.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

Volume

42

Issue

2

fYear

1995

fDate

2/1/1995 12:00:00 AM

Firstpage

215

Lastpage

218

Abstract

Leakage of electrons out of the active region of InGaAsP/InP laser heterostructures at different temperatures was measured by a purely electrical method. Comparison of the obtained results with the results of modeling indicates that special attention should be paid to the acceptor doping levels in the p cladding layer immediately adjacent the active region. Lower acceptor concentration may lead to unacceptably high thermionic leakage

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser variables measurement; semiconductor lasers; thermionic electron emission; InGaAsP-InP; acceptor concentration; acceptor doping levels; active region; carrier leakage; direct measurement; electrical method; laser heterostructures; p cladding layer; thermionic leakage; Charge carrier processes; Diode lasers; Electric variables measurement; Electron emission; Indium phosphide; Laser modes; Optical design; Surface emitting lasers; Temperature dependence; Thermionic emission;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.370077

Filename

370077