Breakdown analysis of an asymmetrical double recessed power MESFET´s

Author

Gaquiere, Christopher ; Bonte, B ; Theron, Didier ; Crosnier, Y. ; Arsene-Henri, P. ; Pacou, T.

Author_Institution

Inst. d´´Electron. et de Microelectron. du Nord, CNRS, Villeneuve D´´Ascq, France

Volume

42

Issue

2

fYear

1995

fDate

2/1/1995 12:00:00 AM

Firstpage

209

Lastpage

214

Abstract

FET´s with double stepped gate recess are commonly admitted to be presently a very convenient structure capable to overcome the fundamental power limitation related to the breakdown voltage. The present paper deals with an analysis of a double recessed MESFET with a very good and instructive breakdown performance. For the first time we explain on the basis of gate current observations why the double recess structure allows a large breakdown improvement not only at pinch off voltage but also at open channel. Moreover it is shown that the breakdown optimization is fully compatible with the microwave gain performance

Keywords

electric breakdown; microwave field effect transistors; microwave power transistors; power MESFET; power field effect transistors; asymmetrical double recessed structure; breakdown analysis; breakdown optimization; double stepped gate recess; microwave gain performance; open channel; pinchoff voltage; power MESFET; Breakdown voltage; Degradation; Doping; Electric breakdown; MESFETs; Ohmic contacts; Performance analysis; Performance gain; Student members; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.370078

Filename

370078