Title :
Introduction to the Special Issue on GaN and Related Nitride Compound Device Reliability
Author :
Christou, Aris ; Fantini, Fausto
fDate :
6/1/2008 12:00:00 AM
Abstract :
The 23 papers in this special issue focus on gallium nitride and related nitride compounds device reliability. The main emphasis in this issue is on the reliability of HFETs and LEDs.
Keywords :
Aluminum gallium nitride; Electric breakdown; Frequency; Gallium arsenide; Gallium nitride; HEMTs; Microwave devices; Photonic band gap; Special issues and sections; Thermal conductivity;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2008.925989
