DocumentCode
74702
Title
Improvement of conversion efficiency for solar cell with metal-oxide-semiconductor diode
Author
Matsuo, Naoto ; Kobayashi, Takehiko ; Heya, Akira
Author_Institution
Dept. of Mater. Sci. & Chem., Univ. of Hyogo, Himeji, Japan
Volume
49
Issue
21
fYear
2013
fDate
October 10 2013
Firstpage
1351
Lastpage
1353
Abstract
The novel structure of a solar cell is presented that has the metal-oxide-semiconductor diode at the side wall of the power generation layer. The influence of the field-effect on the recombination of carriers is simulated and the increase of the conversion efficiency of the solar cell by the gate voltage application is discussed. In addition, the relationship between the effect of the gate voltage application on the conversion efficiency, the lifetime and the surface recombination velocity is discussed.
Keywords
MIS devices; semiconductor diodes; solar cells; conversion efficiency improvement; field-effect; gate voltage application; metal-oxide-semiconductor diode; power generation layer; solar cell; surface recombination velocity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2013.2485
Filename
6651373
Link To Document