Title :
Intrinsically switchable, high-Q ferroelectricon-silicon composite film bulk acoustic resonators
Author :
Sis, Seyit Ahmet ; Seungku Lee ; Lee, Victor ; Bayraktaroglu, Adrian K. ; Phillips, J.D. ; Mortazawi, Amir
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
This paper presents a voltage-controlled, high-quality factor (Q) composite thin-film bulk acoustic resonator (FBAR) at 1.28 GHz. The composite FBAR consists of a thin layer of barium strontium titanate (BST) that is sandwiched between two electrodes deposited on a silicon-on-insulator (SOI) wafer. The BST layer, which has a strong electrostrictive effect, is used for electromechanical transduction by means of its voltage-induced piezoelectricity. The silicon layer, with its low mechanical loss, increases the Q of the resonator. The composite FBAR presented here exhibits Qs exceeding 800 with a resonance frequency and Q product (f × Q) of 1026 GHz.
Keywords :
acoustic resonators; barium compounds; bulk acoustic wave devices; electrodes; electrostriction; elemental semiconductors; piezoelectricity; silicon; silicon-on-insulator; strontium compounds; thin films; BaSrTiO3-Si; barium strontium titanate layer; electrodes; electromechanical transduction; electrostrictive effect; frequency 1.28 GHz; intrinsically switchable high-Q ferroelectric-on-silicon composite film bulk acoustic resonators; mechanical loss; resonance frequency; silicon layer; silicon-on-insulator wafer; thin layer; voltage-controlled high-quality factor composite thin-film bulk acoustic resonator; voltage-induced piezoelectricity; Electrodes; Film bulk acoustic resonators; Impedance; Power transmission lines; Resonant frequency; Transmission line measurements;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
DOI :
10.1109/TUFFC.2014.6722609
