MOS Technology Drivers

Author

Tonti, William R.

Author_Institution

IBM Semicond. R&D Center, Essex Junction, VT

Volume

8

Issue

2

fYear

2008

fDate

6/1/2008 12:00:00 AM

Firstpage

406

Lastpage

415

Abstract

The semiconductor industry has entered a new revolution where connectivity, applications, and an overall pervasive market drives the need for increased circuit density, improved performance, and a decrease in power dissipation. These issues are the backbone for some of the latest silicon technology advancements, including the integration of stress-enabled transistors and advanced silicon-on-insulator substrates. Future advancements may include multiple gated devices, high- gate oxides, and band-gap-tailored devices. This paper will review some of the early complementary metal-oxide-semiconductor transistor reliability issues and solutions that have allowed this industry to flourish over the last 25 years. A discussion on how these past issues and new advances affect power versus performance is the framework and motivation of this paper.

Keywords

CMOS integrated circuits; MOSFET; semiconductor device reliability; silicon-on-insulator; MOS technology drivers; circuit density; complementary metal-oxide-semiconductor transistor reliability; power dissipation; semiconductor industry; silicon-on-insulator substrates; stress-enabled transistors; CMOS technology; Computer industry; DC generators; Hot carriers; Pervasive computing; Power dissipation; Power generation; Silicon on insulator technology; Substrates; Transistors; Bulk silicon; CMOS performance; burn in silicon-on-insulator (SOI); channel hot carrier (CHC); negative-bias temperature instability (NBTI); power dissipation; reliability; substrate hot carrier (SHC); transistor scaling;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2008.922223

Filename

4539825