• DocumentCode
    747255
  • Title

    Comparison of device performance of highly strained Ga1-xInxAs/Al0.48In0.52As (0.53

  • Author

    Chang, T.Y. ; Feuer, Mark D. ; Lalevic, B.

  • Volume
    28
  • Issue
    3
  • fYear
    1992
  • Firstpage
    329
  • Lastpage
    330
  • Abstract
    A series of 1.3 mu m gate length Ga1-xInxAs/Al0.48In0.52As MODFETs covering a wide range of x values in the channel (0.53or=0.77) has been successfully fabricated and compared. Although the maximum values of transconductance (1010 mS/mm), saturated drain current density (920 mA/mm), and room-temperature mobility are obtained with x=0.85, lower x values of 0.77-0.80 are found to offer the highest 77 K mobility and the best cutoff-frequency-gate-length product.
  • Keywords
    III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; high electron mobility transistors; indium compounds; 1.3 micron; Ga 1-xIn xAs-Al 0.48In 0.52As; III-V semiconductors; MODFETs; cutoff-frequency-gate-length product; device performance; gate length; room-temperature mobility; saturated drain current density; strain compensation; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920204
  • Filename
    121455
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=747255