DocumentCode
74727
Title
Endurance Improvement Technology With Nitrogen Implanted in the Interface of 
Resistance Switching Device
Author
Yong-En Syu ; Rui Zhang ; Ting-Chang Chang ; Tsung-Ming Tsai ; Kuan-Chang Chang ; Jen-Chung Lou ; Tai-Fa Young ; Jung-Hui Chen ; Min-Chen Chen ; Ya-Liang Yang ; Chih-Cheng Shih ; Tian-Jian Chu ; Jian-Yu Chen ; Chih-Hung Pan ; Yu-Ting Su ; Hui-Chun Huang ;
Author_Institution
Dept. of Phys., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Volume
34
Issue
7
fYear
2013
fDate
Jul-13
Firstpage
864
Lastpage
866
Abstract
Incorporation of nitrogen as an oxygen-confining layer in the resistance switching reaction region is investigated to improve the reliability of resistance random access memory (RRAM). The switching mechanism can be attributed to the formation and rupture of conduction filaments. A compatible WSiON (around 5 nm) layer is introduced at the interface of tungsten silicon oxide (WSiOx) and TiN electrode to prevent the randomly diffusing oxygen ions surpassing the storage region of the WSiON layer. The double-layer WSiOx/WSiON memory structure would enhance the endurance over 100 times so as to better confirm the WSiOx RRAM application of nonvolatile memory.
Keywords
circuit reliability; electrochemical electrodes; fracture; ion implantation; platinum; random-access storage; titanium compounds; tungsten compounds; Pt-WSiOx-WSiON-TiN; RRAM; conduction filament; double-layer memory structure; electrode; nitrogen implantation; nonvolatile memory; oxygen-confining layer; random diffusing oxygen ion surpassing; reliability; resistance random access memory; resistance switching device; tungsten silicon oxide; Nonvolatile memory; resistance switching; tungsten silicon oxide $({rm WSiO}_{bf x})$
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2260125
Filename
6519267
Link To Document