DocumentCode :
747324
Title :
UV-SLPT for Gas Sensor Research on MISiC Devices
Author :
Klingvall, Roger ; Eriksson, Mats ; Lundström, Ingemar
Author_Institution :
Div. of Appl. Phys., Linkoping Univ.
Volume :
7
Issue :
4
fYear :
2007
fDate :
4/1/2007 12:00:00 AM
Firstpage :
592
Lastpage :
599
Abstract :
A modified Scanning Light Pulse Technique (SLPT) setup that can be used to evaluate SiC-based gas-sensitive field-effect devices is introduced. This is exemplified with measurements on a Pt-MISiC capacitor that has a metal thickness gradient. The device shows large responses to hydrogen and ammonia in air. The H2 and NH3 responses show a complementary dependence on the Pt film thickness at 140degC. The temperature dependence differs however for the two gases. The measurement setup uses UV transparent optics together with mechanical chopping of light from a short wavelength light source. The spatial resolution of the system is found to be approximately 50 mum
Keywords :
MIS capacitors; ammonia; gas sensors; silicon compounds; wide band gap semiconductors; 140 C; H2 response; MISiC devices; NH3 response; Pt film thickness; Pt-MISiC capacitor; UV transparent optics; UV-SLPT; ammonia; gas sensor; gas-sensitive field-effect devices; hydrogen; metal thickness gradient; scanning light pulse; short wavelength light source; wide band gap semiconductor; Capacitors; Gas detectors; Gases; Hydrogen; Mechanical variables measurement; Optical films; Optical sensors; Temperature dependence; Thickness measurement; Wavelength measurement; Ammonia; MISiC; Pt; SLPT; UV-SLPT; gas sensors; hydrogen; platinum; scanning light pulse technique; silicon carbide; wide band gap semiconductor;
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2007.891954
Filename :
4135359
Link To Document :
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