Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain

Author

Palestri, Pierpaolo ; Esseni, David ; Eminente, Simone ; Fiegna, Claudio ; Sangiorgi, Enrico ; Selmi, Luca

Author_Institution

DIEGM, Univ. of Udine, Italy

Volume

52

Issue

12

fYear

2005

Firstpage

2727

Lastpage

2735

Abstract

In this paper, and in Part II, Monte Carlo (MC) simulations including quantum corrections to the potential and calibrated scattering models are used to study electronic transport in bulk and double-gate silicon-on-insulator MOSFETs with L_G down to 14-nm designed according to the 2003 International Technology Roadmap for Semiconductors. Simulations with and without scattering are used to assess the influence of quasi-ballistic transport on the MOSFET on-current. We analyze in detail the flux of back-scattered carriers. The role of scattering in different parts of the device is clarified and the MC results are compared to simple models for quasi-ballistic transport presented in the literature.

Keywords

MOSFET; Monte Carlo methods; ballistic transport; electron backscattering; nanotechnology; semiconductor device models; silicon-on-insulator; Monte Carlo method; backscattered carriers; electronic transport; nanoMOSFET; quantum corrections; quasi ballistic transport; scattering models; semiconductor device modeling; silicon on insulator; Analytical models; Ballistic transport; Electrons; MOSFETs; Monte Carlo methods; Nanoscale devices; Particle scattering; Quantization; Quantum computing; Silicon on insulator technology; Back-scattering; MOSFETs; Monte Carlo (MC) method; ballistic transport; semiconductor device modeling; silicon-on-insulator (SOI);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.859593

Filename

1546338