Title :
Measuring the effective channel length of MOSFETs
Author :
Ng, Kwok K. ; Brews, John R.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
Eleven measurement methods are outlined, and their assumptions are examined. The methods are analyzed, critiqued, and compared. Recommendations are made as to which methods are best under various conditions.<>
Keywords :
insulated gate field effect transistors; semiconductor device testing; MOSFETs; effective channel length; measurement methods; Design engineering; Equations; Etching; Length measurement; Lithography; MOSFETs; Manufacturing processes; Monitoring; Surface resistance; Voltage;
Journal_Title :
Circuits and Devices Magazine, IEEE
