• DocumentCode
    747600
  • Title

    Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by enhanced-CAFM

  • Author

    Blasco, X. ; Nafría, M. ; Aymerich, X. ; Pétry, J. ; Vandervorst, W.

  • Author_Institution
    Dept. d´´Enginyeria Electron., Univ. Autonoma de Barcelona, Bellaterra, Spain
  • Volume
    52
  • Issue
    12
  • fYear
    2005
  • Firstpage
    2817
  • Lastpage
    2819
  • Abstract
    An enhanced conductive atomic force microscope has enabled a measurement of the conduction through a HfO2/SiO2 gate stack until breakdown (BD) in a single measurement, with nanometer resolution. Before the stack BD, the current-voltage characteristic shows several conduction modes. After BD, switchings between different conduction states were observed, showing that BD is a reversible phenomenon.
  • Keywords
    MIS devices; atomic force microscopy; electrical conductivity; hafnium compounds; semiconductor device breakdown; semiconductor device reliability; silicon compounds; HfO2-SiO2; MOS gate stacks; conduction states; conductive atomic force microscope; current-voltage characteristics; dielectric breakdown; enhanced-CAFM; gate dielectric; nanoscale post-breakdown conduction; Atomic force microscopy; Atomic measurements; Conductivity measurement; Current measurement; Degradation; Electric breakdown; Force measurement; Hafnium oxide; Testing; Voltage; Conductive atomic force microscopy (CAFM); dielectric breakdown; gate dielectric; high-; reliability;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2005.859705
  • Filename
    1546352
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=747600