DocumentCode :
747998
Title :
Systematic errors of noise parameter determination caused by imperfect source impedance measurement
Author :
Wiatr, Wojciech ; Walker, David K.
Author_Institution :
Warsaw Univ. of Technol., Poland
Volume :
54
Issue :
2
fYear :
2005
fDate :
4/1/2005 12:00:00 AM
Firstpage :
696
Lastpage :
700
Abstract :
We present a rigorous two-step analysis of systematic errors in the four-noise parameter determination of a two-port network using the cold-source technique. This analysis is based on an original model that accounts for residual errors in the source impedance measurement. The method employs two linear fractional transforms to decompose the errors into relevant factor sets affecting the parameters in different ways. Analyses performed for a low-noise pseudomorphic high-electron mobility transistor (PHEMT) and a microwave amplifier show that the noise parameters of the low-noise PHEMT are highly vulnerable to such errors.
Keywords :
electric impedance measurement; high electron mobility transistors; integrated circuit noise; measurement errors; microwave amplifiers; parameter estimation; two-port networks; cold source technique; error analysis; linear fractional transforms; microwave amplifier; microwave field-effect transistors; network analyzer; noise parameter determination; noise parameters; parameter estimation; pseudomorphic high-electron mobility transistor; residual errors; source impedance measurement; systematic errors; two port network; 1f noise; Error analysis; HEMTs; Impedance measurement; Low-noise amplifiers; MODFETs; Microwave amplifiers; Microwave transistors; PHEMTs; Performance analysis; Amplifiers; error analysis; microwave field-effect transistors; modeling; network analyzer; noise; parameter estimation; residual errors;
fLanguage :
English
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9456
Type :
jour
DOI :
10.1109/TIM.2005.843534
Filename :
1408267
Link To Document :
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