DocumentCode :
748045
Title :
An Organic-Based Diode–Memory Device With Rectifying Property for Crossbar Memory Array Applications
Author :
Teo, Eric Yeow Hwee ; Zhang, Chunfu ; Lim, Siew Lay ; Kang, En-Tang ; Chan, Daniel S H ; Zhu, Chunxiang
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Volume :
30
Issue :
5
fYear :
2009
fDate :
5/1/2009 12:00:00 AM
Firstpage :
487
Lastpage :
489
Abstract :
An organic-based diode-memory device that has a bistable memory function and a high rectification ratio has been studied. The diode-memory device is fabricated by incorporating an organic-based diode component in series with a polymer memory component. The organic-based diode-memory device performs well as a reliable rectifying memory device, achieving an excellent on/off current ratio of 106 and a high rectification ratio of 103. The conduction models are also fitted to study the proposed conductivity mechanism of the rectifying memory device. The demonstrated organic-based diode-memory device is very promising for use in a passive matrix crossbar polymer memory array.
Keywords :
diodes; rectification; rectifying circuits; bistable memory function; conduction models; conductivity mechanism; crossbar polymer memory array applications; organic-based diode-memory device; rectification; Memory array; polymer diode; polymer memory; rectifying polymer memory;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2017387
Filename :
4838799
Link To Document :
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