An Organic-Based Diode–Memory Device With Rectifying Property for Crossbar Memory Array Applications

Author

Teo, Eric Yeow Hwee ; Zhang, Chunfu ; Lim, Siew Lay ; Kang, En-Tang ; Chan, Daniel S H ; Zhu, Chunxiang

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

Volume

30

Issue

5

fYear

2009

fDate

5/1/2009 12:00:00 AM

Firstpage

487

Lastpage

489

Abstract

An organic-based diode-memory device that has a bistable memory function and a high rectification ratio has been studied. The diode-memory device is fabricated by incorporating an organic-based diode component in series with a polymer memory component. The organic-based diode-memory device performs well as a reliable rectifying memory device, achieving an excellent on/off current ratio of 10⁶ and a high rectification ratio of 10³. The conduction models are also fitted to study the proposed conductivity mechanism of the rectifying memory device. The demonstrated organic-based diode-memory device is very promising for use in a passive matrix crossbar polymer memory array.

Keywords

diodes; rectification; rectifying circuits; bistable memory function; conduction models; conductivity mechanism; crossbar polymer memory array applications; organic-based diode-memory device; rectification; Memory array; polymer diode; polymer memory; rectifying polymer memory;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2017387

Filename

4838799