Very-high-speed selector IC using InP/InGaAs heterojunction bipolar transistors

Author

Ishii, K. ; Murata, K. ; Ida, M. ; Kurishima, K. ; Enoki, T. ; Shibata, T. ; Sano, E.

Author_Institution

NTT Photonics Labs., NTT Corp., Kanagawa, Japan

Volume

38

Issue

10

fYear

2002

fDate

5/9/2002 12:00:00 AM

Firstpage

480

Lastpage

481

Abstract

A selector integrated circuit (IC) as a benchmark to assess the performances of new undoped-emitter InP/InGaAs heterojunction bipolar transistors (HBTs) has been designed and fabricated. Operation of the selector gate at 86 Gbit/s has been achieved using an HBT developed by the authors, which exhibits the f_T of 140 GHz and f_max of 200 GHz at a collector current density of 50 kA/cm². This indicates that InP/InGaAs HBTs have excellent speed performance for making ultra-high-speed ICs with data rates approaching 100 Gbit/s

Keywords

III-V semiconductors; bipolar digital integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; very high speed integrated circuits; 100 Gbit/s; 140 GHz; 200 GHz; 86 Gbit/s; HBT; InP-InGaAs; InP/InGaAs heterojunction bipolar transistors; collector current density; selector integrated circuit; speed performance; ultra-high-speed IC; undoped-emitter structure; very-high-speed selector integrated circuit;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20020313

Filename

1003024