Monolithic AWG-based Discretely Tunable Laser Diode With Nanosecond Switching Speed

Author

Heck, Martijn J R ; La Porta, Antonio ; Leijtens, Xaveer J M ; Augustin, Luc M. ; de Vries, Tjibbe ; Smalbrugge, Barry ; Oei, Yok-Siang ; Nötzel, Richard ; Gaudino, Roberto ; Robbins, David J. ; Smit, Meint K.

Author_Institution

COBRA Res. Inst., Eindhoven Univ. of Technol., Eindhoven

Volume

21

Issue

13

fYear

2009

fDate

7/1/2009 12:00:00 AM

Firstpage

905

Lastpage

907

Abstract

A novel concept for an arrayed-waveguide-grating (AWG)-based fast tunable laser is presented. It is fabricated in the InP-InGaAsP monolithic integration technology. Laser peaks have a sidemode suppression ratio of 30-40 dB. The wavelength switching speed is in the order of a few nanoseconds and switching is achieved by a 1-mA bias current. The switching between AWG channels is discrete and no laser operation takes place at wavelengths corresponding to other channels during the tuning process.

Keywords

III-V semiconductors; arrayed waveguide gratings; gallium arsenide; indium compounds; integrated optoelectronics; laser modes; laser tuning; optical fabrication; semiconductor lasers; telecommunication channels; wavelength division multiplexing; AWG channel switching; InP-InGaAsP; arrayed-waveguide-grating fabrication; current 1 mA; monolithic AWG-based discretely tunable laser diode; monolithic integration technology; nanosecond switching speed; sidemode suppression ratio; wavelength division multiplexing; Arrayed waveguide grating (AWG); integrated optoelectronics; semiconductor lasers; tunable lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2009.2020299

Filename

4838803