Title :
The effects of ionizing radiation on power-MOSFET termination structures
Author :
Davis, K.R. ; Schrimpf, R.D. ; Cellier, F.E. ; Galloway, K.F. ; Burton, D.I. ; Wheatley, C.F., Jr.
Author_Institution :
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
fDate :
12/1/1989 12:00:00 AM
Abstract :
The effects of ionizing radiation on power-MOSFET termination structures were examined through two-dimensional simulation. A wide range of sensitivity to surface-charge density was found for various devices employing floating field rings and/or equipotential field plates. Termination structures that were both insensitive to surface charge and possessed a high breakdown voltage were identified. The results are compared with measurements made on selected structures. Insights into the design of optimum termination structures are obtained
Keywords :
digital simulation; electric breakdown of solids; insulated gate field effect transistors; power transistors; radiation effects; breakdown voltage; computer code; equipotential field plates; floating field rings; ionising radiation effects; optimum termination structures; power-MOSFET termination structures; sensitivity; surface-charge density; two-dimensional simulation; Avalanche breakdown; Computational modeling; Computer simulation; Doping; Electric breakdown; Impact ionization; Ionizing radiation; MOSFETs; P-n junctions; Termination of employment;
Journal_Title :
Nuclear Science, IEEE Transactions on
