The effects of ionizing radiation on power-MOSFET termination structures

Author

Davis, K.R. ; Schrimpf, R.D. ; Cellier, F.E. ; Galloway, K.F. ; Burton, D.I. ; Wheatley, C.F., Jr.

Author_Institution

Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA

Volume

36

Issue

6

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2104

Lastpage

2109

Abstract

The effects of ionizing radiation on power-MOSFET termination structures were examined through two-dimensional simulation. A wide range of sensitivity to surface-charge density was found for various devices employing floating field rings and/or equipotential field plates. Termination structures that were both insensitive to surface charge and possessed a high breakdown voltage were identified. The results are compared with measurements made on selected structures. Insights into the design of optimum termination structures are obtained

Keywords

digital simulation; electric breakdown of solids; insulated gate field effect transistors; power transistors; radiation effects; breakdown voltage; computer code; equipotential field plates; floating field rings; ionising radiation effects; optimum termination structures; power-MOSFET termination structures; sensitivity; surface-charge density; two-dimensional simulation; Avalanche breakdown; Computational modeling; Computer simulation; Doping; Electric breakdown; Impact ionization; Ionizing radiation; MOSFETs; P-n junctions; Termination of employment;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.45411

Filename

45411