Correlation between channel hot-electron degradation and radiation-induced interface trapping in MOS devices

A correlation between channel hot-carrier induced degradation is conventional-drain NMOSFETS and radiation-induced transconductance (g_m) degradation is described. The device lifetime, τ_HE, was proportional to the 1.5 power D]_EFF, where D_EFF is the radiation dose when Δg_m/g_m=0.5. These results indicate that radiation-induced interface trapping is a strong indicator of hot-electron-device lifetime. The proposed radiation test can be applied to devices with both radiation-hard and radiation-soft field oxide. Initial results on lightly-doped-drain (LDD) devices indicate that correlation between hot-electron degradation and radiation-induced interface trapping is strongly dependent on the design of the LDD