Total dose radiation effects for implanted buried oxides

It is noted that the oxygen implantation process is now the most accepted means of forming an SOI substrate. A technique based on high-frequency C-V measurements for extracting the fixed charge, interface state, and doping densities at both of the interfaces associated with this buried oxide is described. The technique was used to trace the evolution of the charge densities with irradiation at both oxide interfaces. The densities of trapped holes and generated interface states were found to be low. The effect of a substrate bias on the radiation response was characterized, showing that a bias exists that minimizes hole trapping, and that the substrate bias eliminates the differences due to the SIMOX (separation by implantation of oxygen) process variations