Prediction of EMI effects in operational amplifiers by a two-input Volterra series model

Author

Fiori, F. ; Crovetti, P.S.

Author_Institution

Electron. Dept., Politecnico di Torino, Turin, Italy

Volume

150

Issue

3

fYear

2003

fDate

6/6/2003 12:00:00 AM

Firstpage

185

Lastpage

193

Abstract

The authors present a new analytical model that describes the nonlinear behaviour of common CMOS operational amplifiers excited by radio-frequency interference (RFI) added to the input nominal signals. The new model is a valid support to analogue integrated circuit designers since it expresses a relationship between circuit parameters, parasitic elements and the amplitude of the RFI induced output offset voltage of a feedback CMOS operational amplifier. The validity of model prediction has been verified through a comparison with experimental and computer simulation results.

Keywords

CMOS analogue integrated circuits; Volterra series; electromagnetic interference; equivalent circuits; feedback amplifiers; nonlinear distortion; nonlinear network analysis; operational amplifiers; radiofrequency interference; transfer functions; EMI effects prediction; RFI induced output offset voltage; RFI-induced distortion; Volterra kernel description; analytical model; circuit parameters; design parameters; feedback CMOS opamps; negative feedback configuration; nonlinear behaviour; opamp design criteria; operational amplifiers; parasitic elements; radiofrequency interference; two-input Volterra series model;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:20030342

Filename

1214763