Single transverse mode operation of 1.55-μm buried heterostructure vertical-cavity surface-emitting lasers

Author

Ohiso, Y. ; Okamoto, H. ; Iga, R. ; Kishi, K. ; Amano, C.

Author_Institution

NTT Photonics Labs., NTT Corp., Kanagawa, Japan

Volume

14

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

738

Lastpage

740

Abstract

We report the single-mode operation of 1.55-μm buried heterostructure vertical-cavity surface-emitting lasers (VCSELs) fabricated on a GaAs-AlAs distributed Bragg reflector using thin-film wafer fusion. A 7-μm VCSEL exhibits a single transverse mode at up to about 0.1-mW maximum optical output power and 75/spl deg/C maximum operation temperature under continuous-wave operation.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser modes; quantum well lasers; surface emitting lasers; wafer bonding; 0.1 mW; 1.55 micron; 7 micron; 75 C; GaAs-AlAs; GaAs-AlAs distributed Bragg reflector; InGaAsP buried heterostructure VCSELs; InP-GaAs; InP-InGaAsP; buried heterostructure vertical-cavity surface-emitting lasers; compressibly strained InGaAsP MQWs; continuous-wave operation; maximum operation temperature; maximum optical output power; single transverse mode operation; thin-film wafer fusion; High speed optical techniques; Laser fusion; Laser modes; Optical refraction; Optical surface waves; Optical variables control; Stimulated emission; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2002.1003077

Filename

1003077