Title :
Simulation analysis of the bipolar amplification in fully-depleted SOI technologies under heavy-ion irradiations
Author :
Castellani-Coulié, Karine ; Munteanu, Daniela ; Ferlet-Cavrois, Veronique ; Autran, Jean-Luc
Author_Institution :
UMR CNRS, Univ. de Provence, Marseille, France
Abstract :
The sensitivity to heavy ions of a 0.25 μm fully-depleted SOI n-channel transistor is evaluated by numerical simulation. The variation of the bipolar gain versus LET and particle location in the structure is thoroughly investigated.
Keywords :
MOSFET; amplification; bipolar transistors; ion beam effects; silicon-on-insulator; LET; MOS transistor; bipolar amplification; bipolar gain; fully-depleted SOI n-channel transistor; heavy ion irradiation; numerical simulation; particle location; silicon-on-insulator; Analytical models; Circuits; Impact ionization; Isolation technology; MOSFETs; Numerical simulation; Semiconductor films; Silicon on insulator technology; Space technology; Voltage; Heavy ions; MOS transistor; silicon; silicon-on-insulator; single-event effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.855810
