A device Simulation and model verification of single event transients in n+-p junctions

In this work we present a simulation study for single events in n⁺-p junctions. The study investigates the variation of both the single-event induced current and the consequent collected charge with bias, substrate doping and minority carrier lifetime. We show that the minority carrier lifetime is the key factor in determining the amount of the total collected charge which is a new finding as per the authors´ knowledge. We also present a brief study of the collection mechanisms and their dependence on the doping and bias. We finally conclude by the verification of a model that we had previously presented for the funneling-assisted collection current.