Title :
Quantitative prediction of semiconductor laser characteristics based on low intensity photoluminescence measurements
Author :
Hader, J. ; Zakharian, A.R. ; Moloney, J.V. ; Nelson, T.R. ; Siskaninetz, W.J. ; Ehret, J.E. ; Hantke, K. ; Hofmann, M. ; Koch, S.W.
Author_Institution :
Arizona Center for Math. Sci., Arizona Univ., Tucson, AZ, USA
fDate :
6/1/2002 12:00:00 AM
Abstract :
A general scheme for the determination of vital operating characteristics of semiconductor lasers from low intensity photoluminescence spectra is outlined and demonstrated. We describe a comprehensive model that allows us to determine properties of the running device like gain spectra, peak gain wavelengths, bandwidths or differential gains, as well as inhomogeneous broadening and actual carrier densities of PL-signals. This information can then be used to compute characteristics like the temperature dependence of the gain, threshold densities, optical field distributions or near-field and far-field outputs.
Keywords :
amplification; laser theory; laser variables measurement; photoluminescence; quantum well lasers; semiconductor lasers; spectral line broadening; MQW structure; bandwidths; carrier densities; comprehensive model; differential gains; far-field outputs; gain spectra; inhomogeneous broadening; low intensity photoluminescence measurements; near-field outputs; operating characteristics; optical field distributions; peak gain wavelengths; semiconductor lasers; threshold densities; Absorption; Charge carrier density; Laboratories; Laser excitation; Optical pumping; Photoluminescence; Semiconductor lasers; Stimulated emission; Surface emitting lasers; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2002.1003085
