Title :
Single-electron logic device with simple structure
Author :
Oya, T. ; Asai, T. ; Amemiya, Y.
Author_Institution :
Dept. of Electr. Eng., Hokkaido Univ., Sapporo, Japan
fDate :
6/26/2003 12:00:00 AM
Abstract :
A logic gate device is described that can be used to develop single-electron LSIs. The device consists of five capacitors and two tunnelling junctions. It accepts two binary inputs and produces NAND or NOR logic output by making use of the voltage shift in its tunnelling threshold caused by the input signals. Computer simulation of a sample subsystem, or a full adder, consisting of the device demonstrated that it operates correctly.
Keywords :
Monte Carlo methods; adders; integrated logic circuits; logic gates; logic simulation; nanoelectronics; single electron devices; Monte Carlo method; NAND logic output; NOR logic output; binary inputs; capacitors; computer simulation; full adder; logic gate device; nanoelectronics; single-electron LSIs; single-electron logic device; tunnelling junctions; tunnelling threshold; voltage shift;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030613
