Title :
A Study of NBTI and Short-Term Threshold Hysteresis of Thin Nitrided and Thick Non-Nitrided Oxides
Author :
Reisinger, Hans ; Vollertsen, Rolf-Peter ; Wagner, Paul-Jürgen ; Huttner, Thomas ; Martin, Andreas ; Aresu, Stefano ; Gustin, Wolfgang ; Grasser, Tibor ; Schlünder, Christian
Author_Institution :
Corp. Reliability Methodology Dept., Infineon Technol., Munich
fDate :
6/1/2009 12:00:00 AM
Abstract :
Negative bias temperature instability (NBTI) degradation and recovery have been investigated for 7-50-nm non-nitrided oxides and compared to thin 1.8- and 2.2-nm nitrided oxides from a dual work function technology. A wide regime of stress fields from 2.5 to 10 MV/cm has been covered. Thermal activation has been studied for temperatures from 25 degC to 200 degC. The NBTI effect for the nitrided oxide is larger than for non-nitrided oxides. The percentage of threshold shift V th which is ldquolostrdquo during a long measurement delay-which is the quantity leading to curved V th versus stress-time curves and to errors in extrapolated lifetimes-is about equal for nitrided or thick non-nitrided oxides. The fraction of recovered V th is strongly dependent on stress time but only weakly dependent on stress field. Recovery in thick oxides leads to exactly the same problems as for non-nitrided oxides, and clearly, a fast measurement method is needed. The effect of short-term threshold shifts has been studied for extremely short stress times down to 200 ns.
Keywords :
MOSFET; recovery; semiconductor device reliability; stress effects; MOSFET; dual work function technology; negative bias temperature instability; recovery; short-term threshold hysteresis; size 7 nm to 50 nm; stress field; stress time; temperature 25 degC to 200 degC; thick nonnitrided oxides; thin nitrided oxides; MOSFET; negative bias temperature instability (NBTI); recovery; relaxation;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2009.2021389