• DocumentCode
    748742
  • Title

    A Study of NBTI and Short-Term Threshold Hysteresis of Thin Nitrided and Thick Non-Nitrided Oxides

  • Author

    Reisinger, Hans ; Vollertsen, Rolf-Peter ; Wagner, Paul-Jürgen ; Huttner, Thomas ; Martin, Andreas ; Aresu, Stefano ; Gustin, Wolfgang ; Grasser, Tibor ; Schlünder, Christian

  • Author_Institution
    Corp. Reliability Methodology Dept., Infineon Technol., Munich
  • Volume
    9
  • Issue
    2
  • fYear
    2009
  • fDate
    6/1/2009 12:00:00 AM
  • Firstpage
    106
  • Lastpage
    114
  • Abstract
    Negative bias temperature instability (NBTI) degradation and recovery have been investigated for 7-50-nm non-nitrided oxides and compared to thin 1.8- and 2.2-nm nitrided oxides from a dual work function technology. A wide regime of stress fields from 2.5 to 10 MV/cm has been covered. Thermal activation has been studied for temperatures from 25 degC to 200 degC. The NBTI effect for the nitrided oxide is larger than for non-nitrided oxides. The percentage of threshold shift V th which is ldquolostrdquo during a long measurement delay-which is the quantity leading to curved V th versus stress-time curves and to errors in extrapolated lifetimes-is about equal for nitrided or thick non-nitrided oxides. The fraction of recovered V th is strongly dependent on stress time but only weakly dependent on stress field. Recovery in thick oxides leads to exactly the same problems as for non-nitrided oxides, and clearly, a fast measurement method is needed. The effect of short-term threshold shifts has been studied for extremely short stress times down to 200 ns.
  • Keywords
    MOSFET; recovery; semiconductor device reliability; stress effects; MOSFET; dual work function technology; negative bias temperature instability; recovery; short-term threshold hysteresis; size 7 nm to 50 nm; stress field; stress time; temperature 25 degC to 200 degC; thick nonnitrided oxides; thin nitrided oxides; MOSFET; negative bias temperature instability (NBTI); recovery; relaxation;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2009.2021389
  • Filename
    4838875