• DocumentCode
    74878
  • Title

    Multi-resonant capacitive microelectromechanical system switch with high isolation for ultra-wideband applications

  • Author

    Min Kyu Yoon ; Seong Jong Cheon ; Park, Jae Young

  • Author_Institution
    Dept. of Electron. Eng., Kwangwoon Univ., Seoul, South Korea
  • Volume
    8
  • Issue
    10
  • fYear
    2013
  • fDate
    Oct. 2013
  • Firstpage
    591
  • Lastpage
    593
  • Abstract
    A multi-resonant capacitive microelectromechanical system switch with wide bandwidth and high isolation has been successfully designed and fabricated for ultra-wideband applications. To achieve high isolation and wide operation frequency bandwidth, three capacitive shunt-connected membranes and meander-shaped inductors with several inductances were utilised in serial connection. Moreover, for achieving a large `ON´/`OFF´ capacitance ratio, a high dielectric aluminium nitride (AlN) film was applied. The measured dielectric relative constant and tangent loss of the AlN film were 8.8 and 0.008, respectively. The capacitive switch has the `ON´/`OFF´ capacitance ratio of 59.6 with the measured capacitances of 52 fF and 3.1 pF at `ON´ and `OFF´ states, respectively. The three resonant frequencies were formed at 4, 5 and 6.5 GHz, and the isolation performances were over 30 dB at the frequencies ranging from 5 to 10 GHz and 70 dB at 6.5 GHz. The size of the fabricated switch was ~1.4 × 1.7 × 0.0083 (height) mm3.
  • Keywords
    aluminium compounds; capacitance; dielectric losses; high-k dielectric thin films; inductance; inductors; membranes; microfabrication; microswitches; permittivity; AlN; AlN film; capacitive shunt-connected membranes; dielectric relative constant; frequency 4 GHz to 10 GHz; high dielectric aluminium nitride film; inductances; isolation performances; meander-shaped inductors; multiresonant capacitive microelectromechanical system switch; off state; on state; on/off capacitance ratio; resonant frequencies; serial connection; tangent loss; ultrawideband applications; wide operation frequency bandwidth;
  • fLanguage
    English
  • Journal_Title
    Micro & Nano Letters, IET
  • Publisher
    iet
  • ISSN
    1750-0443
  • Type

    jour

  • DOI
    10.1049/mnl.2013.0302
  • Filename
    6651452