Title :
High performance 10-12.5 Gbit/s modulator driver in InP SHBT technology
Author :
Lao, Zhihao ; Yu, M. ; Ho, V. ; Guinn, K. ; Xu, Muliang ; Lee, Shing ; Radisic, Vesna ; Wang, K.C.
Author_Institution :
Adv. Product Dev. Center, Opnext Inc., Thousand Oaks, CA, USA
fDate :
6/26/2003 12:00:00 AM
Abstract :
A high performance modulator driver circuit is presented using 4" InP SHBT technology. The IC was developed for driving EAM modulators in OC-192 (10 Gbit/s) and with forward error correction (FEC: 10.7 Gbit/s or 12.5 Gbit/s) optical fibre systems. The monolithic integrated circuit features output amplitude control, output crossing point control and output DC offset control. Measured results show the circuit operates at 10 to 12.5 Gbit/s with a swing of 3.1 Vp-p at each output and 20/18 ps rise/fall times. The power dissipation is 1.4 W with a standard power supply of -5.2 V.
Keywords :
III-V semiconductors; bipolar integrated circuits; driver circuits; electro-optical modulation; forward error correction; indium compounds; integrated optoelectronics; mixed analogue-digital integrated circuits; optical communication equipment; -5.2 V; 1 micron; 1.4 W; 10 to 12.5 Gbit/s; 18 ps; 20 ps; 4 in; EAM modulator driving; InP; InP SHBT technology; OC-192; circuit operation; fall times; forward error correction; high performance 10-12.5 Gbit/s modulator driver; monolithic integrated circuit; optical fibre systems; output DC offset control; output amplitude control; output crossing point control; power dissipation; rise times;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030614
