High performance 10-12.5 Gbit/s modulator driver in InP SHBT technology

Author

Lao, Zhihao ; Yu, M. ; Ho, V. ; Guinn, K. ; Xu, Muliang ; Lee, Shing ; Radisic, Vesna ; Wang, K.C.

Author_Institution

Adv. Product Dev. Center, Opnext Inc., Thousand Oaks, CA, USA

Volume

39

Issue

13

fYear

2003

fDate

6/26/2003 12:00:00 AM

Firstpage

983

Lastpage

985

Abstract

A high performance modulator driver circuit is presented using 4" InP SHBT technology. The IC was developed for driving EAM modulators in OC-192 (10 Gbit/s) and with forward error correction (FEC: 10.7 Gbit/s or 12.5 Gbit/s) optical fibre systems. The monolithic integrated circuit features output amplitude control, output crossing point control and output DC offset control. Measured results show the circuit operates at 10 to 12.5 Gbit/s with a swing of 3.1 V_p-p at each output and 20/18 ps rise/fall times. The power dissipation is 1.4 W with a standard power supply of -5.2 V.

Keywords

III-V semiconductors; bipolar integrated circuits; driver circuits; electro-optical modulation; forward error correction; indium compounds; integrated optoelectronics; mixed analogue-digital integrated circuits; optical communication equipment; -5.2 V; 1 micron; 1.4 W; 10 to 12.5 Gbit/s; 18 ps; 20 ps; 4 in; EAM modulator driving; InP; InP SHBT technology; OC-192; circuit operation; fall times; forward error correction; high performance 10-12.5 Gbit/s modulator driver; monolithic integrated circuit; optical fibre systems; output DC offset control; output amplitude control; output crossing point control; power dissipation; rise times;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20030614

Filename

1214794