Title :
1.54 μm singlemode InP-based Q-dash lasers
Author :
Bach, L. ; Kaiser, W. ; Schwertberger, R. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Dept. of Tech. Phys., Univ. Wurzburg, Germany
fDate :
6/26/2003 12:00:00 AM
Abstract :
Singlemode lasers based on AlGaInAs/InAs/InP quantum-dash layers were for the first time fabricated with emission wavelengths in the 1.55 μm telecommunication band. A low thermal shift of the gain maximum in quantum-dash structures allows a wide operation temperature range for distributed feedback lasers.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; optical communication equipment; quantum dot lasers; 1.54 micron; AlGaInAs-InAs-InP; DFB lasers; InP-based lasers; Q-dash lasers; distributed feedback lasers; emission wavelengths; quantum-dash structures; singlemode lasers; telecommunication band; wide operation temperature range;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030640
