DocumentCode
748891
Title
Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications
Author
Dowd, P. ; Johnson, S.R. ; Feld, S.A. ; Adamcyk, M. ; Chaparro, S.A. ; Joseph, J. ; Hilgers, K. ; Horning, M.P. ; Shiralagi, K. ; Zhang, Y.-H.
Author_Institution
Lytek Corp., Phoenix, AZ, USA
Volume
39
Issue
13
fYear
2003
fDate
6/26/2003 12:00:00 AM
Firstpage
987
Lastpage
988
Abstract
Room-temperature continuous-wave operation of antimonide-based long wavelength VCSELs is demonstrated, with 1.2 mW power output at 1266 nm, the highest figure reported so far using this material system. Singlemode powers of 0.3 mW at 10°C and 0.1 mW at 70°C and sidemode suppression ratios up to 42 dB are also achieved.
Keywords
III-V semiconductors; gallium arsenide; optical transmitters; semiconductor lasers; surface emitting lasers; 0.1 mW; 0.3 mW; 1.2 mW; 10 degC; 1266 nm; 70 degC; GaAsP-GaAs-GaAsSb; GaAsP/GaAs/GaAsSb; communications applications; continuous-wave operation; long wavelength VCSELs; power output; sidemode suppression ratios; singlemode powers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030664
Filename
1214796
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