Ammonia nitrided isolation oxide for selective epitaxial growth technology to eliminate edge transistor effects of SOI and bulk N-channel MOSFETs

A simple and effective method to eliminate edge transistor effects in SOI and bulk N-channel MOSFETs, fabricated using selective epitaxial growth of silicon, is demonstrated. Employing an ammonia nitridation of the isolation oxide, before the epitaxial growth, the boron out-diffusion into the surrounding oxide is effectively suppressed. Parasitic edge transistors in both SOI and bulk N-MOSFETs are eliminated.