Title :
InGaP/InGaAs double delta-doped channel transistor
Author :
Chuang, Hung-Ming ; Cheng, Shiou-Ying ; Liao, Xin-Da ; Chen, Chun-Yuan ; Liu, Wen-Chau
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan
fDate :
6/26/2003 12:00:00 AM
Abstract :
A new InGaP/InGaAs double δ-doped channel transistor has been fabricated and studied. Good device performances including high turn-on voltage, low gate leakage current, and good microwave characteristics over a wide operating temperature regime are obtained. Insignificant degradations of DC and RF performances as the temperature increases are found.
Keywords :
III-V semiconductors; doping profiles; gallium arsenide; indium compounds; leakage currents; microwave field effect transistors; DC performances; HFET; InGaP-InGaAs; InGaP/InGaAs; RF performances; double delta-doped channel transistor; gate leakage current; microwave characteristics; operating temperature regime; turn-on voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030660
