Title :
Charge collection inefficiencies induced by intense 12C bombardment of SSB detectors
Author :
Aguilera, E.F. ; Rosales, Pedro ; Ramírez-Jiménez, F.J.
Author_Institution :
Dept. del Acelerador, Inst. Nacional de Investigaciones Nucl., Mexico
Abstract :
Experimental data are presented showing that, for a light heavy ion such as Carbon, large collection-efficiency losses appear in Silicon Surface Barrier detectors for large enough ion fluences. This effect, apparently related to the onset of radiation damage of the detector, shows an S-shape behavior with the fluence above threshold.
Keywords :
Rutherford backscattering; carbon; ion beam effects; silicon radiation detectors; Rutherford backscattering; S-shape behavior; SSB detectors; Silicon Surface Barrier detectors; carbon; charge collection inefficiencies; intense 12C bombardment; ion fluences; light heavy ion; pulse height defect; radiation damage; Amplitude modulation; Backscatter; Large Hadron Collider; Linearity; Radiation detectors; Radiative recombination; Radiofrequency interference; Semiconductor radiation detectors; Silicon radiation detectors; Spontaneous emission; Ion fluence; Rutherford backscattering; pulse height defect; silicon detector;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.856754
