• DocumentCode
    749329
  • Title

    Development of a C∞-continuous small-signal model for a MOS transistor in normal operation

  • Author

    Iniguez, B. ; Moreno, Eugenio García

  • Author_Institution
    Dept. of Phys., Univ. Illes Balears, Palma de Mallorca, Spain
  • Volume
    14
  • Issue
    2
  • fYear
    1995
  • fDate
    2/1/1995 12:00:00 AM
  • Firstpage
    163
  • Lastpage
    166
  • Abstract
    An explicit and single-piece model for MOSFET´s has been developed. The expressions for the dc current and total charges are C ∞-continuous through all regions of normal operation. The correctness and the advantages of the new model are checked by comparing with HSPICE simulations. Good agreement with the dc and charge models implemented in HPSPICE has been found. Besides, the small-signal parameters show smoother transitions between the different regions. Therefore, the advantages of the new model for circuit simulation are demonstrated
  • Keywords
    MOS integrated circuits; MOSFET; SPICE; circuit CAD; circuit analysis computing; digital simulation; integrated circuit design; semiconductor device models; C∞-continuous small-signal model; HSPICE simulations; MOS transistor; circuit simulation; dc current; normal operation; single-piece model; small-signal parameters; total charges; Capacitance; Charge carrier density; Equations; MOSFETs; Taylor series; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/43.370428
  • Filename
    370428
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=749329