Title :
Development of a C∞-continuous small-signal model for a MOS transistor in normal operation
Author :
Iniguez, B. ; Moreno, Eugenio García
Author_Institution :
Dept. of Phys., Univ. Illes Balears, Palma de Mallorca, Spain
fDate :
2/1/1995 12:00:00 AM
Abstract :
An explicit and single-piece model for MOSFET´s has been developed. The expressions for the dc current and total charges are C ∞-continuous through all regions of normal operation. The correctness and the advantages of the new model are checked by comparing with HSPICE simulations. Good agreement with the dc and charge models implemented in HPSPICE has been found. Besides, the small-signal parameters show smoother transitions between the different regions. Therefore, the advantages of the new model for circuit simulation are demonstrated
Keywords :
MOS integrated circuits; MOSFET; SPICE; circuit CAD; circuit analysis computing; digital simulation; integrated circuit design; semiconductor device models; C∞-continuous small-signal model; HSPICE simulations; MOS transistor; circuit simulation; dc current; normal operation; single-piece model; small-signal parameters; total charges; Capacitance; Charge carrier density; Equations; MOSFETs; Taylor series; Transconductance;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
