Characterization of active pixel sensors in 0.25 μm CMOS technology

Author

Velthuis, J.J. ; Allport, P.P. ; Casse, G. ; Evans, A. ; Turchetta, R. ; Tyndel, M. ; Villani, G.

Author_Institution

Univ. of Liverpool, UK

Volume

52

Issue

5

fYear

2005

Firstpage

1887

Lastpage

1891

Abstract

We are developing CMOS monolithic active pixel sensors for high energy physics applications. We have successfully produced three test structures. They feature several different pixel types including a Flexible APS (FAPS). The FAPS has a 10 deep pipeline in each pixel. This is specifically designed with the beam structure of the TESLA proposal for the Linear Collider in mind. Here results demonstrating that the standard active pixel devices are still operating well after a fluence of 10¹⁴ p/cm² will be reported. Furthermore, the response of the FAPS to minimum ionizing particles (MIPs) from a ¹⁰⁶Ru β-source are presented. The obtained S/N ratio for the 10 cells of the FAPS varies between 15 and 17.

Keywords

CMOS integrated circuits; position sensitive particle detectors; semiconductor counters; 0.25 micron; ¹⁰⁶Ru beta-source; CMOS monolithic active pixel sensors; Linear Collider; S/N ratio; TESLA proposal; beam structure; flexible APS; high energy physics applications; minimum ionizing particles; CMOS image sensors; CMOS technology; Conductivity; Diodes; Epitaxial layers; Financial advantage program; Radiation detectors; Sensor phenomena and characterization; Substrates; Testing; Active pixel sensors; CMOS imaging; solid-state detectors; tracking;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2005.856915

Filename

1546522