Title :
Characterization of active pixel sensors in 0.25 μm CMOS technology
Author :
Velthuis, J.J. ; Allport, P.P. ; Casse, G. ; Evans, A. ; Turchetta, R. ; Tyndel, M. ; Villani, G.
Author_Institution :
Univ. of Liverpool, UK
Abstract :
We are developing CMOS monolithic active pixel sensors for high energy physics applications. We have successfully produced three test structures. They feature several different pixel types including a Flexible APS (FAPS). The FAPS has a 10 deep pipeline in each pixel. This is specifically designed with the beam structure of the TESLA proposal for the Linear Collider in mind. Here results demonstrating that the standard active pixel devices are still operating well after a fluence of 1014 p/cm2 will be reported. Furthermore, the response of the FAPS to minimum ionizing particles (MIPs) from a 106Ru β-source are presented. The obtained S/N ratio for the 10 cells of the FAPS varies between 15 and 17.
Keywords :
CMOS integrated circuits; position sensitive particle detectors; semiconductor counters; 0.25 micron; 106Ru beta-source; CMOS monolithic active pixel sensors; Linear Collider; S/N ratio; TESLA proposal; beam structure; flexible APS; high energy physics applications; minimum ionizing particles; CMOS image sensors; CMOS technology; Conductivity; Diodes; Epitaxial layers; Financial advantage program; Radiation detectors; Sensor phenomena and characterization; Substrates; Testing; Active pixel sensors; CMOS imaging; solid-state detectors; tracking;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.856915
