DocumentCode :
74948
Title :
Extraction Technique for Intrinsic Subgap DOS in a-IGZO TFTs by De-Embedding the Parasitic Capacitance Through the Photonic
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) by deembedding the parasitic capacitance in amorphous indium-gallium-zinc-oxide TFTs through the optical charge pumping method. As structure-dependent parameters in the proposed extraction technique, the overlap length L<sub>OV</sub> between the source/drain (S/D) and the active layer and the parasitic overlap area between the gate and the S/D metal (C<sub>par,S</sub>/C<sub>par,D</sub>) are considered under dark and subbandgap photonic states. We obtained g<sub>A,int</sub>(E) as a superposition of the exponential deep and tail states with N<sub>TA,int</sub> = 6.0 × 10<sup>16</sup> eV<sup>-1</sup>·cm<sup>-3</sup>, kTT<sub>A,int</sub> = 0.16 eV,N<sub>DA,int</sub> = 1.8 × 10<sup>15</sup> eV<sup>-1</sup> · cm<sup>-3</sup>, and kT<sub>DA,int</sub> = 1.9 eV from samples with various parasitic areas.</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>amorphous semiconductors; gallium compounds; indium compounds; thin film transistors; InGaZnO; TFT; amorphous semiconductors; electron volt energy 0.16 eV; electron volt energy 1.9 eV; exponential deep states; intrinsic subgap density of states; optical charge pumping method; overlap capacitance; parasitic capacitance; parasitic overlap area; photonic C-V measurement; subbandgap photonic states; tail states; Capacitance measurement; Logic gates; Parasitic capacitance; Photonics; Thin film transistors; Amorphous; extraction; overlap capacitance; parasitic capacitance; parasitic effect; subgap density of states (DOS); thin-film transistors (TFTs);</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fLanguage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>English</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Journal_Title : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Electron Device Letters, IEEE</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Publisher : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>ieee</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>ISSN : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>0741-3106</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Type : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>jour</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>DOI : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>10.1109/LED.2012.2222014</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Filename : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>6361260</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Link To Document : </div><div class='valueDiv leftDirection leftAlign fullRecValueEnglish col-xs-8 col-sm-10'><a href='https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=74948' target='_blank'>https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=74948</a></div>
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