DocumentCode
74948
Title
Extraction Technique for Intrinsic Subgap DOS in a-IGZO TFTs by De-Embedding the Parasitic Capacitance Through the Photonic
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https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=74948
) by deembedding the parasitic capacitance in amorphous indium-gallium-zinc-oxide TFTs through the optical charge pumping method. As structure-dependent parameters in the proposed extraction technique, the overlap length L<sub>OV</sub> between the source/drain (S/D) and the active layer and the parasitic overlap area between the gate and the S/D metal (C<sub>par,S</sub>/C<sub>par,D</sub>) are considered under dark and subbandgap photonic states. We obtained g<sub>A,int</sub>(E) as a superposition of the exponential deep and tail states with N<sub>TA,int</sub> = 6.0 × 10<sup>16</sup> eV<sup>-1</sup>·cm<sup>-3</sup>, kTT<sub>A,int</sub> = 0.16 eV,N<sub>DA,int</sub> = 1.8 × 10<sup>15</sup> eV<sup>-1</sup> · cm<sup>-3</sup>, and kT<sub>DA,int</sub> = 1.9 eV from samples with various parasitic areas.</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>amorphous semiconductors; gallium compounds; indium compounds; thin film transistors; InGaZnO; TFT; amorphous semiconductors; electron volt energy 0.16 eV; electron volt energy 1.9 eV; exponential deep states; intrinsic subgap density of states; optical charge pumping method; overlap capacitance; parasitic capacitance; parasitic overlap area; photonic C-V measurement; subbandgap photonic states; tail states; Capacitance measurement; Logic gates; Parasitic capacitance; Photonics; Thin film transistors; Amorphous; extraction; overlap capacitance; parasitic capacitance; parasitic effect; subgap density of states (DOS); thin-film transistors (TFTs);</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fLanguage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>English</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Journal_Title</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Electron Device Letters, IEEE</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Publisher</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>ieee</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>ISSN</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>0741-3106</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Type</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>jour</h2></div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>DOI</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>10.1109/LED.2012.2222014</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Filename</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>6361260</div></div>
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<div class='row g-0 align-items-center'><div class='col-12 col-md-3 fw-bold mb-2 mb-md-0'><span class='text-muted small'>Link To Document</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><a class='text-break' href='https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=74948' target='_blank' rel=)
https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=74948