Semi-insulating Te-saturated CdTe

Author

Grill, R. ; Franc, J. ; Höschl, P. ; Turkevych, I. ; Belas, E. ; Moravec, P.

Author_Institution

Fac. of Math. & Phys., Charles Univ., Prague, Czech Republic

Volume

52

Issue

5

fYear

2005

Firstpage

1925

Lastpage

1931

Abstract

The evolution of defect structure and self-compensation is theoretically studied within quasichemical formalism in undoped and donor-doped Te-saturated CdTe during the cooling in the temperature interval 700°C-100°C. We show, that proper thermal treatment, including low temperature (cca 200°C) dwell, allows to prepare semi-insulating CdTe with deep level doping below the limit 10¹³ cm^-3, which is demanded in detector industry. New high-temperature transport data are used to refine on previous native defect properties for the modeling. Variant defect models are analyzed. Diffusion rates at lowered temperature are annotated to approve the model for real-time experimental verification.

Keywords

cooling; deep levels; defect states; diffusion; impurity states; semiconductor counters; semiconductor doping; solid-state phase transformations; 700 to 100 C; cooling; deep defect structure; deep level doping; defect models; diffusion rates; donor doped semiinsulating Te-saturated CdTe; high-temperature transport data; quasichemical formalism; real-time experimental verification; self-compensation; thermal treatment; Annealing; Charge carrier density; Cooling; Crystalline materials; Detectors; Doping; Physics; Semiconductor process modeling; Tellurium; Temperature; CdTe; deep defect; detector; self-compensation;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2005.856801

Filename

1546529