Title :
Sub-1-K Operation of SiGe Transistors and Circuits
Author :
Najafizadeh, Laleh ; Adams, Joseph S. ; Phillips, Stanley D. ; Moen, Kurt A. ; Cressler, John D. ; Aslam, Shahid ; Stevenson, Thomas R. ; Meloy, Robert M.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
fDate :
5/1/2009 12:00:00 AM
Abstract :
We present the first measurement results for silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) and SiGe BiCMOS circuits operating in the sub-1-K regime. Robust transistor operation of a first-generation 0.5 times 2.5 times 4-mum2 SiGe transistor is demonstrated at package temperatures as low as 300 mK. In addition, a SiGe BiCMOS bandgap voltage reference is verified to be fully functional at operating temperatures below 700 mK. The SiGe voltage reference exhibits a temperature coefficient of 160 ppm/degC over the temperature range of 700 mK-300 K.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; BiCMOS bandgap voltage reference; SiGe; heterojunction bipolar transistors; sub-1-K operation; temperature 700 mK to 300 mK; voltage reference; Analog integrated circuits; BiCMOS; SiGe HBTs; cryogenic temperatures; heterojunction bipolar transistor (HBT); silicon germanium (SiGe); voltage reference;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2016767
