Sub-1-K Operation of SiGe Transistors and Circuits

Author

Najafizadeh, Laleh ; Adams, Joseph S. ; Phillips, Stanley D. ; Moen, Kurt A. ; Cressler, John D. ; Aslam, Shahid ; Stevenson, Thomas R. ; Meloy, Robert M.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA

Volume

30

Issue

5

fYear

2009

fDate

5/1/2009 12:00:00 AM

Firstpage

508

Lastpage

510

Abstract

We present the first measurement results for silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) and SiGe BiCMOS circuits operating in the sub-1-K regime. Robust transistor operation of a first-generation 0.5 times 2.5 times 4-mum² SiGe transistor is demonstrated at package temperatures as low as 300 mK. In addition, a SiGe BiCMOS bandgap voltage reference is verified to be fully functional at operating temperatures below 700 mK. The SiGe voltage reference exhibits a temperature coefficient of 160 ppm/degC over the temperature range of 700 mK-300 K.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; BiCMOS bandgap voltage reference; SiGe; heterojunction bipolar transistors; sub-1-K operation; temperature 700 mK to 300 mK; voltage reference; Analog integrated circuits; BiCMOS; SiGe HBTs; cryogenic temperatures; heterojunction bipolar transistor (HBT); silicon germanium (SiGe); voltage reference;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2016767

Filename

4838951