Title :
High-Speed InGaAs P-I-N Photodetector With Planar Buried Heterostructure
Author :
Wang, Y.S. ; Chang, S.J. ; Tsai, C.L. ; Wu, M.C. ; Chiou, Y.Z. ; Huang, Y.H. ; Lin, W.
Author_Institution :
Inst. of Microelectron., Nat. Cheng Kung Univ., Tainan
fDate :
6/1/2009 12:00:00 AM
Abstract :
An InGaAs buried-heterostructure photodetector (BH-PD) was proposed and fabricated. By introducing etching and refilling with large bandgap and lower concentration semi-insulating InP, it was found that we can reduce the capacitance of P-I-N PDs by 33% without significantly increasing the reverse leakage current. It was also found that we can achieve a 3-dB bandwidth of 11.8 GHz from BH-PD, which was much larger than the 7.1-GHz 3-dB bandwidth observed from conventional InGaAs P-I-N PDs.
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; photodetectors; High-speed p-i-n photodetector; InGaAs; bandwidth 11.8 GHz; buried-heterostructure photodetector; etching; reverse leakage current; Absorption; Bandwidth; Capacitance; Educational technology; Indium gallium arsenide; Indium phosphide; Materials science and technology; Optical coupling; PIN photodiodes; Photodetectors; 3-dB bandwidth; InGaAs; buried-heterostructure photodetector (BH-PD); capacitance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2018170
