DocumentCode :
749606
Title :
Characterization of Sb2Te3 ohmic contacts on P-type CdTe single crystals
Author :
Zappettini, Andrea ; Bissoli, Francesco ; Gombia, Enos ; Bosio, Alessio ; Romeo, Nicola
Author_Institution :
IMEM-CNR, Parma, Italy
Volume :
52
Issue :
5
fYear :
2005
Firstpage :
1961
Lastpage :
1963
Abstract :
The realization of low resistivity and stable contacts on p-type CdTe is still challenging, especially if high annealing temperatures must be avoided. In this paper, the electrical characteristics of Sb2Te3 contacts on p-type CdTe single crystals are studied. It is found that the resistivity of the contacts is low and constant with time.
Keywords :
annealing; antimony compounds; electrical resistivity; ohmic contacts; semiconductor counters; Sb2Te3 ohmic contacts; Sb2Te3-CdTe; annealing temperatures; electrical characteristics; low resistivity; p-type CdTe single crystals; Annealing; Conductivity; Contact resistance; Crystals; Heating; Ohmic contacts; Photovoltaic cells; Sputtering; Tellurium; Temperature;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2005.856819
Filename :
1546536
Link To Document :
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