• DocumentCode
    749606
  • Title

    Characterization of Sb2Te3 ohmic contacts on P-type CdTe single crystals

  • Author

    Zappettini, Andrea ; Bissoli, Francesco ; Gombia, Enos ; Bosio, Alessio ; Romeo, Nicola

  • Author_Institution
    IMEM-CNR, Parma, Italy
  • Volume
    52
  • Issue
    5
  • fYear
    2005
  • Firstpage
    1961
  • Lastpage
    1963
  • Abstract
    The realization of low resistivity and stable contacts on p-type CdTe is still challenging, especially if high annealing temperatures must be avoided. In this paper, the electrical characteristics of Sb2Te3 contacts on p-type CdTe single crystals are studied. It is found that the resistivity of the contacts is low and constant with time.
  • Keywords
    annealing; antimony compounds; electrical resistivity; ohmic contacts; semiconductor counters; Sb2Te3 ohmic contacts; Sb2Te3-CdTe; annealing temperatures; electrical characteristics; low resistivity; p-type CdTe single crystals; Annealing; Conductivity; Contact resistance; Crystals; Heating; Ohmic contacts; Photovoltaic cells; Sputtering; Tellurium; Temperature;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2005.856819
  • Filename
    1546536
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=749606