Title :
Characteristics of InGaAs Submonolayer Quantum-Dot and InAs Quantum-Dot Photonic-Crystal Vertical-Cavity Surface-Emitting Lasers
Author :
Yang, Hung-Pin D. ; Hsu, I. Chen ; Chang, Ya Hsien ; Lai, Fang I ; Yu, Hsin Chieh ; Lin, Gray ; Hsiao, Ru Shang ; Maleev, Nikolai A. ; Blokhin, Sergej A. ; Kuo, Hao-Chung ; Chi, Jim Y.
Author_Institution :
Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst., Hsinchu
fDate :
6/1/2008 12:00:00 AM
Abstract :
We have made InGaAs submonolayer (SML) quantum-dot (QD) and InAs QD photonic-crystal vertical-cavity surface-emitting lasers (PhC-VCSELs) for fiber-optic communications in the 990 and 1300 nm ranges, respectively. The active region of the InGaAs SML QD PhC-VCSEL contains three InGaAs SML QD layers, with each of the SML QD layer formed by alternating depositions of InAs and GaAs. The active region of the InAs QD PhC-VCSEL contains 17 undoped InAs-InGaAs QD layers. Both types of QD PhC-VCSELs exhibit single-mode characteristics throughout the current range, with side-mode suppression ratio (SMSR) larger than 35 dB. A maximum output power of 5.7 mW has been achieved for the InGaAs SML QD PhC-VCSEL. The near-field image study of the QD PhC-VCSELs indicates that the laser beam is well confined by the photonic-crystal structure of the device.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; optical fibre communication; photonic crystals; quantum dot lasers; surface emitting lasers; InAs; InAs quantum-dot; InAs-InGaAs QD layers; InGaAs; InGaAs submonolayer quantum-dot; PhC-VCSEL; fiber-optic communications; laser beam; near-field image; photonic crystal; power 5.7 mW; side-mode suppression ratio; single-mode characteristics; vertical-cavity surface-emitting lasers; wavelength 990 nm to 1300 nm; Apertures; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Optical fiber polarization; Power generation; Quantum dots; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; Photonic-crystal (PhC); quantum-dot (QD); submonolayer (SML); vertical-cavity surface-emitting laser (VCSEL);
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2008.922172
