Title :
Evaluation of AlInN=GaN HEMTs on sapphire substrate in microwave, time and temperature domains
Author :
Medjdoub, F. ; Ducatteau, D. ; Gaquière, C. ; Carlin, J.-F. ; Gonschorek, M. ; Feltin, E. ; Py, M.A. ; Grandjean, N. ; Kohn, E.
Author_Institution :
Univ. of Ulm
Abstract :
AlInN/GaN high electron mobility transistors (HEMTs) on sapphire substrate have yielded a maximum drain current density of 1.26 A/mm with a current gain cutoff and maximum oscillation frequencies about 26 and 40 GHz, respectively, for a 0.25 mum gate length device. Pulsed characterisations indicate absence of the virtual gate effect and reveal that the drain current dispersion is mainly due to thermal effects. Temperature stress experiments up to 800degC indicate that surface and hetero-interface are inherently stable. The reasons for the behaviour are discussed
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; microwave field effect transistors; sapphire; substrates; wide band gap semiconductors; 0.25 micron; 26 GHz; 40 GHz; Al2O3; AlInN-GaN; HEMT; current gain cutoff; drain current dispersion; high electron mobility transistors; maximum drain current density; maximum oscillation frequencies; microwave domain; pulsed characterisations; sapphire substrate; temperature domain; temperature stress experiments; thermal effects; time domain; virtual gate effect;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20073170
