Title :
Improved double cascode self-bootstrapping technique for gain enhancement in GaAs MESFET opamps
Author :
Xiao, Shiwu ; Salama, C.A.T.
Author_Institution :
Toronto Univ., Ont., Canada
fDate :
6/4/1992 12:00:00 AM
Abstract :
An improved double cascode self-bootstrapping technique for gain enhancements in GaAs MESFET opamps is proposed. The experimental results show that this new configuration can provide a high output impedance and a significant reduction in area. A single stage opamp using this technique shows a midband gain of 48 dB and a unity-gain frequency of 500 MHz.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; linear integrated circuits; operational amplifiers; 48 dB; 500 MHz; GaAs; MESFET opamps; double cascode; gain enhancement; high output impedance; op amp; self-bootstrapping; single stage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920711
