DocumentCode :
750638
Title :
Poly-oxide/poly-Si/SiO2/Si structure for ellipsometry measurement
Author :
Chao, T.S. ; Lee, C.L. ; Lei, T.F.
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
28
Issue :
12
fYear :
1992
fDate :
6/4/1992 12:00:00 AM
Firstpage :
1144
Lastpage :
1145
Abstract :
A multiple poly-oxide/poly-Si/SiO2/Si sandwiched structure is proposed for the conventional single incident angle and single wavelength ellipsometry measurement of the thicknesses and refractive indices of the poly-oxide and the poly-Si at the same time. The structure is simple and gives accurate results.
Keywords :
ellipsometry; refractive index measurement; semiconductor-insulator-semiconductor structures; silicon; silicon compounds; thickness measurement; Si-SiO 2-Si; ellipsometry measurement; refractive indices; single incident angle; thicknesses;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920722
Filename :
141168
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=750638
بازگشت