مرکز منطقه ای اطلاع رساني علوم و فناوري - -5.2 V AlInAs/GaInAs HBT ICs for 10 Gbit/s optical fibre telecommunications

DocumentCode :

750648

Title :

-5.2 V AlInAs/GaInAs HBT ICs for 10 Gbit/s optical fibre telecommunications

Author :

Montgomery, R.K. ; Humphrey, D.A. ; Kopf, R.F. ; Jalali, Bahram ; Smith, Peter ; Nottenburg, R.N. ; Sivco, D.L. ; Cho, Andrew Y.

Author_Institution :

AT & T Bell Labs., Murray Hill, NJ, USA

Volume :

Issue :

fYear :

1992

fDate :

6/4/1992 12:00:00 AM

Firstpage :

1146

Lastpage :

1147

Abstract :

Five 10 Gbit/s lightwave ICs implemented using 52 GHz f_T AlInAs/GaInAs HBTs are described. This collection of circuits represents the first single channel fibre optic regenerator implemented using AlInAs/GaInAs HBTs exclusively, reported to date. A maximum single-ended output swing of 2 V peak to peak at 10 Gbit/s was demonstrated for this technology.

Keywords :

aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical communication equipment; optical fibres; 10 Gbit/s; AlInAs-GaInAs; HBTs; lightwave ICs; optical fibre telecommunications; single channel fibre optic regenerator; single-ended output swing;

fLanguage :

English

Journal_Title :

Electronics Letters

Publisher :

iet

ISSN :

0013-5194

Type :

jour

DOI :

10.1049/el:19920723

Filename :

141169

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=750648