• DocumentCode
    750648
  • Title

    -5.2 V AlInAs/GaInAs HBT ICs for 10 Gbit/s optical fibre telecommunications

  • Author

    Montgomery, R.K. ; Humphrey, D.A. ; Kopf, R.F. ; Jalali, Bahram ; Smith, Peter ; Nottenburg, R.N. ; Sivco, D.L. ; Cho, Andrew Y.

  • Author_Institution
    AT & T Bell Labs., Murray Hill, NJ, USA
  • Volume
    28
  • Issue
    12
  • fYear
    1992
  • fDate
    6/4/1992 12:00:00 AM
  • Firstpage
    1146
  • Lastpage
    1147
  • Abstract
    Five 10 Gbit/s lightwave ICs implemented using 52 GHz fT AlInAs/GaInAs HBTs are described. This collection of circuits represents the first single channel fibre optic regenerator implemented using AlInAs/GaInAs HBTs exclusively, reported to date. A maximum single-ended output swing of 2 V peak to peak at 10 Gbit/s was demonstrated for this technology.
  • Keywords
    aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical communication equipment; optical fibres; 10 Gbit/s; AlInAs-GaInAs; HBTs; lightwave ICs; optical fibre telecommunications; single channel fibre optic regenerator; single-ended output swing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920723
  • Filename
    141169
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=750648