Abstract :
Accurate modelling of HEMT noise mechanisms has been obtained using a new technique for implementing generalised noise sources in SPICE, including frequency and correlation effects. A pin-HEMT optical front end operating between 2.2 and 4.3 GHz was designed, and the equivalent input noise spectral density was measured to be below 3.0 pA/ square root (Hz) over the passband.
Keywords :
electron device noise; high electron mobility transistors; optical communication equipment; p-i-n diodes; photodetectors; receivers; telecommunications computing; 2.2 to 4.3 GHz; HEMT noise mechanisms; SPICE noise modelling; correlation effects; generalised noise sources; input noise spectral density; pin-HEMT optical front end;
