• DocumentCode
    75071
  • Title

    Micromachined catalytic combustion type gas sensor for hydrogen detection

  • Author

    Xifeng Liu ; Hanpeng Dong ; Shanhong Xia

  • Author_Institution
    Beijing Autom. Tech. Res. Inst., Beijing Instrum. Ind. Group Co., Ltd., Beijing, China
  • Volume
    8
  • Issue
    10
  • fYear
    2013
  • fDate
    Oct. 2013
  • Firstpage
    668
  • Lastpage
    671
  • Abstract
    A catalytic combustion hydrogen sensor has been fabricated using the microelectromechanical system technology. The application of hafnium oxide thin films as the insulating layer has been deposited by electron beam evaporation. The semiconductor combustion catalyst tin oxide layer was prepared by chemical vapour deposition. It is a novel application of semiconductor material to a catalytic combustion gas sensor. The resistivity of hafnium dioxide thin film is about 3 × 1012 Ω cm at 900°C. Both the sensing elements and the reference elements could be connected in a suitable circuit such as a Wheatstone configuration with low power consumption. The catalytic combustion sensor shows high response to hydrogen at an operating voltage of 4 V and has a higher relative sensitivity and a good linearity for concentrations of hydrogen ranging from 0 to 4% in volume. Good consistency and high accuracy of the micromachined catalytic combustion gas sensor were achieved.
  • Keywords
    catalysis; chemical vapour deposition; combustion; electrical resistivity; electron beam deposition; gas sensors; hafnium compounds; hydrogen; insulating thin films; micromachining; microsensors; semiconductor materials; thin film sensors; tin compounds; vacuum deposition; H2; HfO2; SnO2; Wheatstone configuration; catalytic combustion gas sensor; chemical vapour deposition; electron beam evaporation; hafnium oxide thin films; hydrogen concentrations; hydrogen detection; insulating layer; low-power consumption; microelectromechanical system; micromachined catalytic combustion type gas sensor; operating voltage; reference elements; relative sensitivity; resistivity; semiconductor combustion catalyst; semiconductor material; sensing elements; temperature 900 degC; tin oxide layer; voltage 4 V;
  • fLanguage
    English
  • Journal_Title
    Micro & Nano Letters, IET
  • Publisher
    iet
  • ISSN
    1750-0443
  • Type

    jour

  • DOI
    10.1049/mnl.2013.0468
  • Filename
    6651470