DocumentCode :
75071
Title :
Micromachined catalytic combustion type gas sensor for hydrogen detection
Author :
Xifeng Liu ; Hanpeng Dong ; Shanhong Xia
Author_Institution :
Beijing Autom. Tech. Res. Inst., Beijing Instrum. Ind. Group Co., Ltd., Beijing, China
Volume :
8
Issue :
10
fYear :
2013
fDate :
Oct. 2013
Firstpage :
668
Lastpage :
671
Abstract :
A catalytic combustion hydrogen sensor has been fabricated using the microelectromechanical system technology. The application of hafnium oxide thin films as the insulating layer has been deposited by electron beam evaporation. The semiconductor combustion catalyst tin oxide layer was prepared by chemical vapour deposition. It is a novel application of semiconductor material to a catalytic combustion gas sensor. The resistivity of hafnium dioxide thin film is about 3 × 1012 Ω cm at 900°C. Both the sensing elements and the reference elements could be connected in a suitable circuit such as a Wheatstone configuration with low power consumption. The catalytic combustion sensor shows high response to hydrogen at an operating voltage of 4 V and has a higher relative sensitivity and a good linearity for concentrations of hydrogen ranging from 0 to 4% in volume. Good consistency and high accuracy of the micromachined catalytic combustion gas sensor were achieved.
Keywords :
catalysis; chemical vapour deposition; combustion; electrical resistivity; electron beam deposition; gas sensors; hafnium compounds; hydrogen; insulating thin films; micromachining; microsensors; semiconductor materials; thin film sensors; tin compounds; vacuum deposition; H2; HfO2; SnO2; Wheatstone configuration; catalytic combustion gas sensor; chemical vapour deposition; electron beam evaporation; hafnium oxide thin films; hydrogen concentrations; hydrogen detection; insulating layer; low-power consumption; microelectromechanical system; micromachined catalytic combustion type gas sensor; operating voltage; reference elements; relative sensitivity; resistivity; semiconductor combustion catalyst; semiconductor material; sensing elements; temperature 900 degC; tin oxide layer; voltage 4 V;
fLanguage :
English
Journal_Title :
Micro & Nano Letters, IET
Publisher :
iet
ISSN :
1750-0443
Type :
jour
DOI :
10.1049/mnl.2013.0468
Filename :
6651470
Link To Document :
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