Title :
Plasma resistant modified I-line, deep UV, and e-beam resists
Author :
Bousaba, Joseph E. ; Tranjan, Farid M. ; Qushair, Lilian E. ; DuBois, Thomas D. ; Bobbio, Stephen M. ; Jose, Magie T. ; Nickel, John L. ; Jones, Susan K. ; Dudley, Bruce W.
Author_Institution :
Phillips Semicond. Device Eng., Albuquerque, NM, USA
fDate :
3/1/1995 12:00:00 AM
Abstract :
This paper presents chemically modified photoresists for use as plasma etch masks over various substrates during patterning in IC manufacturing with sub-0.5 μm resolution. The modification consists of directly adding the modifying compounds into the photoresist solutions. The added compounds increase the oxygen, fluorine, and chlorine plasma resistance of photoresists, thus promoting a high etch rate selectivity with respect to other substrates and films (e.g., polyimide, SiO2, etc.)
Keywords :
electron resists; integrated circuit technology; masks; photoresists; sputter etching; 0.5 micron; IC manufacturing; chemically modified photoresists; deep UV resists; e-beam resists; etch rate selectivity; modified I-line resists; patterning; photoresist solutions; plasma etch masks; plasma resistance; Etching; Nickel; Optical films; Plasma applications; Plasma chemistry; Plasma materials processing; Polyimides; Resists; Silicon; Substrates;
Journal_Title :
Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on
