Plasma resistant modified I-line, deep UV, and e-beam resists

Author

Bousaba, Joseph E. ; Tranjan, Farid M. ; Qushair, Lilian E. ; DuBois, Thomas D. ; Bobbio, Stephen M. ; Jose, Magie T. ; Nickel, John L. ; Jones, Susan K. ; Dudley, Bruce W.

Author_Institution

Phillips Semicond. Device Eng., Albuquerque, NM, USA

Volume

18

Issue

1

fYear

1995

fDate

3/1/1995 12:00:00 AM

Firstpage

195

Lastpage

200

Abstract

This paper presents chemically modified photoresists for use as plasma etch masks over various substrates during patterning in IC manufacturing with sub-0.5 μm resolution. The modification consists of directly adding the modifying compounds into the photoresist solutions. The added compounds increase the oxygen, fluorine, and chlorine plasma resistance of photoresists, thus promoting a high etch rate selectivity with respect to other substrates and films (e.g., polyimide, SiO₂, etc.)

Keywords

electron resists; integrated circuit technology; masks; photoresists; sputter etching; 0.5 micron; IC manufacturing; chemically modified photoresists; deep UV resists; e-beam resists; etch rate selectivity; modified I-line resists; patterning; photoresist solutions; plasma etch masks; plasma resistance; Etching; Nickel; Optical films; Plasma applications; Plasma chemistry; Plasma materials processing; Polyimides; Resists; Silicon; Substrates;

fLanguage

English

Journal_Title

Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on

Publisher

ieee

ISSN

1070-9886

Type

jour

DOI

10.1109/95.370755

Filename

370755