DocumentCode :
750741
Title :
Modeling the impact of preflushing on CTE in proton irradiated CCD-based detectors
Author :
Philbrick, R.H.
Author_Institution :
Ball Aerosp. & Technol. Corp., Boulder, CO, USA
Volume :
49
Issue :
2
fYear :
2002
fDate :
4/1/2002 12:00:00 AM
Firstpage :
559
Lastpage :
567
Abstract :
A software model is described that performs a "real world" simulation of the operation of several types of charge-coupled device (CCD)-based detectors in order to accurately predict the impact that high-energy proton radiation has on image distortion and modulation transfer function (MTF). The model was written primarily to predict the effectiveness of vertical preflushing on the custom full frame CCD-based detectors intended for use on the proposed Kepler Discovery mission, but it is capable of simulating many other types of CCD detectors and operating modes as well. The model keeps track of the occupancy of all phosphorous-silicon (P-V), divacancy (V-V) and oxygen-silicon (O-V) defect centers under every CCD electrode over the entire detector area. The integrated image is read out by simulating every electrode-to-electrode charge transfer in both the vertical and horizontal CCD registers. A signal level dependency on the capture and emission of signal is included and the current state of each electrode (e.g., barrier or storage) is considered when distributing integrated and emitted signal. Options for performing preflushing, preflashing, and including mini-channels are available on both the vertical and horizontal CCD registers. In addition, dark signal generation and image transfer smear can be selectively enabled or disabled. A comparison of the charge transfer efficiency (CTE) data measured on the Hubble space telescope imaging spectrometer (STIS) CCD with the CTE extracted from model simulations of the STIS CCD show good agreement
Keywords :
CCD image sensors; astronomical instruments; physics computing; proton effects; silicon radiation detectors; CCD-based detectors; Hubble space telescope imaging spectrometer; O-Si; P-Si; charge transfer efficiency; dark signal; defect centers; divacancy; electrode-to-electrode charge transfer; modulation transfer function; preflushing; proton irradiation; Charge coupled devices; Charge transfer; Electrodes; Image generation; Predictive models; Protons; Radiation detectors; Signal generators; Software performance; Transfer functions;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2002.1003673
Filename :
1003673
Link To Document :
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